IXFP180N10T2
IXFP180N10T2 Datasheet
IXFA180N10T2 IXFP180N10T2
| Part | Datasheet |
|---|---|
IXFP180N10T2 |
IXFP180N10T2 (pdf) |
| Related Parts | Information |
|---|---|
IXFA180N10T2 |
IXFA180N10T2 |
| PDF Datasheet Preview |
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| Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET IXFA180N10T2 IXFP180N10T2 VDSS = 100V ID25 = 180A RDS on 6mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Chip Capability Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 175°C TC = 25°C 1.6mm 0.062in. from Case for 10s Plastic Body for 10 Seconds Mounting Torque TO-220 TO-263 TO-220 Test Conditions TJ = 25°C Unless Otherwise Specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 250uA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 150°C RDS on VGS = 10V, ID = 50A, Notes 1, 2 Maximum Ratings ±20 ±30 -55 +175 -55 +175 300 260 V/ns °C °C °C °C °C Nm/lb.in. Characteristic Values Min. Typ. Max. ±100 nA 10 uA 750 uA |
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