DSEP30-06CR
DSEP30-06CR Datasheet
DSEP 30-06CR
| Part | Datasheet |
|---|---|
DSEP30-06CR |
DSEP30-06CR (pdf) |
| PDF Datasheet Preview |
|---|
| HiPerDynFREDTM Epitaxial Diode with soft recovery Electrically Isolated Back Surface VRSM VRRM Type DSEP 30-06CR DSEP 30-06CR IFAV = 30 A VRRM = 600 V trr = 20 ns C ISOPLUS 247TM A Isolated back surface * A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions Maximum Ratings Features TC = 140°C rectangular, d = tP < 10 µs rep. rating, pulse width limited by TVJM TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 3 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive 70 30 tbd 300 A • Silicon chip on Direct-Copper-Bond n A substrates A - High power dissipation g- Isolated mounting surface - 2500 V electrical isolation smJ • Low cathode to tab capacitance < 25 pF • International standard package • Planar passivated chips • Very short recovery time ew TC = 25°C n 50/60 Hz RMS IISOL 1 mA mounting force with clip r typical fo Conditions ot TVJ = 25°C VR = VRRM N TVJ = 150°C VR = VRRM 2500 Characteristic Values typ. max. • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Isolated and UL registered E153432 • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits and PFC circuits • Rectifiers in switch mode power supplies SMPS • Inductive heating IF = 30 A TVJ = 150°C TVJ = 25°C |
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