GWS9294

GWS9294 Datasheet


GWS9294

Part Datasheet
GWS9294 GWS9294 GWS9294 (pdf)
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DATASHEET

Dual 20V N-Channel Power MOSFET

GWS9294

The GWS9294 is a dual 20V, 12mΩ, N-channel power MOSFET used for Li-ion battery protection. It is offered in a 2mmx2mm MLPD with a very low thickness profile, 1mm maximum thickness. The device has extremely high power density, reducing the board size of the Li-ion battery power system. Designed for handheld devices with a high level of ESD protection.

V BR DSS rDS ON

PRODUCT SUMMARY

ID = 250µA VGS = 4.5V
20V 12mΩ

Minimum Typical
• Monolithic dual MOSFET
• Low rDS ON in a small footprint
• Ultra low gate charge and figure of merit
• MLPD 2mmx2mm package
• Low thermal resistance
• Li-ion battery protection
• Portable devices, cell phones, PDA
• Rated for short-circuit and overcurrent protection
• Integrated gate diodes provide ESD protection of 2.5kV HBM

FET1 Gate1

Source1

FET2 Gate2

Source2

FIGURE EQUIVALENT CIRCUIT
3 G2 4 S2

G1 2 S1 1

FIGURE MLPD BOTTOM SIDE

December 22, 2015

FN8786.1

CAUTION These devices are sensitive to electrostatic discharge follow proper IC Handling Procedures.
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Ordering Information

GWS9294

Pin Configuration

GWS9294 4 LD QFN BOTTOM VIEW

GWS9294

PART MARKING 94

TEMP RANGE °C
-55 to +150

PACKAGE RoHS Compliant
4 Ld QFN

Pin Descriptions

PIN # 1 2 3 4

PIN NAME S1 G1 G2 S2

DESCRIPTION Source of FET1 Gate of FET1 Gate of FET2 Source of FET2

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FN8786.1 December 22, 2015

GWS9294

Absolute Maximum Ratings Note 1

Drain-to-Source Voltage VDS 20V Gate-to-Source Voltage VGS ±12V Drain Current ID Note 2

TA = +25°C .10.1A 10s , 6.5A Steady State TA = +70°C .8.1A 10s , 5.2A Steady State Drain Current RthjFoot TF = +25°C 15A Steady State Pulsed Drain Current IDM 60A ESD Rating

Human Body Model .2.5kV

Thermal Information

Thermal Resistance Typical
°C/W °C/W

Steady State

Maximum Power Dissipation PD Note 2 TA = +25°C 3.6W 10s 1.47W Steady State TA = +70°C .2.29W 10s 0.94W Steady State

Junction and Storage Temperature Range TJ, Tstg . .-55°C to +150°C Pb-Free Reflow Profile see TB493

CAUTION Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.

NOTES TJ = +25°C unless otherwise noted. Surface mounted on FR4 board.

Electrical Characteristics TJ = +25°C unless otherwise noted

PARAMETER

TEST CONDITIONS

Note 3 Note 4 Note 3 UNIT

STATIC

V BR SSS Drain-to-Source Breakdown Voltage ISSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage

VGS th Gate Threshold Voltage rDS ON Drain-to-Source On-State Resistance Note 5
per MOSFET
rSS ON Source-to-Source On-State Resistance Note 5 both MOSFETs in series

VSD Source-to-Drain Diode Voltage DYNAMIC

VGS = 0V, ID = 250µA VGS = 0V, VDS = 20V VDS = 0V VGS = ±8V VDS = VGS, ID = 1mA VGS = 4.5V, ID = 6.5A VGS = 4.0V, ID = 6.5A VGS = 3.1V, ID = 6.0A VGS = 2.5V, ID = 5.5A VGS = 4.5V, ID = 6.5A VGS = 4.0V, ID = 6.5A VGS = 3.1V, ID = 6.0A VGS = 2.5V, ID = 5.5A VGS = 0, IS = 6.5A
±10 µA
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Datasheet ID: GWS9294 639142