SKB06N60HSATMA1

SKB06N60HSATMA1 Datasheet

SKB06N60HS

Part	Datasheet
SKB06N60HSATMA1	SKB06N60HSATMA1 (pdf)

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SKB06N60HS High Speed IGBT in NPT-technology • 30% lower Eoff compared to previous generation • Short circuit withstand time 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • High ruggedness, temperature stable behaviour • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target applications • Complete product spectrum and PSpice Models : PG-TO-263-3-2 Type Eoff Marking Package SKB06N60HS 600V 6A 80µJ 150°C K06N60HS PG-TO-263-3-2 Maximum Ratings Parameter Value Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient tp<1µs, D<0.05 Short circuit withstand time2 VGE = 15V, VCC 400V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature reflow soldering, MSL1 VCE IC ICpuls - IFpuls VGE Ptot Tj , Tstg Tj tl - 12 6 24 12 6 24 ±20 ±30 10 175 245 Unit V A V µs W °C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. Power Semiconductors SKB06N60HS Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient SMD version, device on PCB1 Symbol RthJC RthJCD RthJA Conditions Max. Value Unit

PDF Datasheet Preview

SKB06N60HS

High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models :

PG-TO-263-3-2

Type

Eoff

Marking

Package

SKB06N60HS
600V 6A
80µJ 150°C K06N60HS PG-TO-263-3-2

Maximum Ratings

Parameter

Value

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static
transient tp<1µs, D<0.05 Short circuit withstand time2 VGE = 15V, VCC 400V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature

Time limited operating junction temperature for t < 150h Soldering temperature reflow soldering, MSL1

VCE IC

ICpuls -

IFpuls VGE

Ptot

Tj , Tstg Tj tl -
12 6 24
12 6 24 ±20 ±30 10
175 245

Unit V A

V µs W °C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

Power Semiconductors

SKB06N60HS

Thermal Resistance

Parameter

Characteristic IGBT thermal resistance, junction case Diode thermal resistance, junction case Thermal resistance, junction ambient SMD version, device on PCB1

Symbol RthJC RthJCD RthJA

Conditions

Max. Value

Unit

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Datasheet ID: SKB06N60HSATMA1 638593