IXFQ28N60P3
IXFQ28N60P3 Datasheet
IXFQ28N60P3 IXFH28N60P3
| Part | Datasheet |
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IXFQ28N60P3 |
IXFQ28N60P3 (pdf) |
| Related Parts | Information |
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IXFH28N60P3 |
IXFH28N60P3 |
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| Advance Technical Information Polar3TM HiperFETTM Power MOSFETs IXFQ28N60P3 IXFH28N60P3 VDSS = ID25 = RDS on 600V 28A 260mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P IXFQ VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 1.6mm 0.062in. from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247 Maximum Ratings ± 30 ± 40 V/ns -55 +150 -55 +150 Nm/lb.in. Test Conditions TJ = 25°C Unless Otherwise Specified BVDSS VGS = 0V, ID = 1mA VGS th VDS = VGS, ID = 2.5mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 Characteristic Values Min. Typ. Max. ±100 nA 25 uA mA 260 mΩ |
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