APTM20UM09SG
APTM20UM09SG Datasheet
APTM20UM09S
| Part | Datasheet |
|---|---|
APTM20UM09SG |
APTM20UM09SG (pdf) |
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| APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module VDSS = 200V RDSon = max Tj = 25°C ID = 195A Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Low stray inductance - M6 power connectors - M4 signal connectors • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance Absolute maximum ratings Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage ID Continuous Drain Current Tc = 25°C Tc = 80°C IDM VGS RDSon Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1300 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website APTM20UM09S All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 1mA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Tj = 25°C Tj = 125°C 400 µA 2000 RDS on Drain Source on Resistance VGS = 10V, ID = 74.5A |
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