SDT10S60
SDT10S60 Datasheet
SDT10S60
| Part | Datasheet |
|---|---|
SDT10S60 |
SDT10S60 (pdf) |
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| the switching behavior • No forward recovery SDT10S60 SiC Schottky Diode Product Summary VRRM 600 V 29 nC PG-TO220-2-2. Type SDT10S60 Package Ordering Code PG-TO220-2-2. Q67040S4643 Marking Pin 1 Pin 2 D10S60 C Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz IF IFRMS Surge non repetitive forward current, sine halfwave IFSM TC=25°C, tp=10ms Repetitive peak forward current IFRM Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current IFMAX tp=10µs, TC=25°C VRRM VRSM Ptot Operating and storage temperature Tj , Tstg Value 10 31 600 75 +175 Unit A V W °C 2008-06-02 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SDT10S60 Values Unit min. typ. max. RthJC RthJA 2 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C |
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