APTM20DHM10G
APTM20DHM10G Datasheet
APTM20DHM10G
| Part | Datasheet |
|---|---|
APTM20DHM10G |
APTM20DHM10G (pdf) |
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| APTM20DHM10G Asymmetrical - bridge MOSFET Power Module VDSS = 200V RDSon = typ Tj = 25°C ID = 175A Tc = 25°C VBUS OUT2 OUT1 CR2 G4 S4 0/VB US VBUS OUT1 0/VBUS S4 G4 O UT2 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 2500 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on APTM20DHM10G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IDSS Zero Gate Voltage Drain Current |
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