MPS6531
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MPS6531 (pdf) |
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MPS6531 MPS6531 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents to 500 mA. Sourced from Process See PN2222A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPS6531 625 200 Units V A °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPS6531 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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