BFY193PZZZA1

BFY193PZZZA1 Datasheet

BFY193 3

Part	Datasheet
BFY193PZZZA1	BFY193PZZZA1 (pdf)

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HiRel NPN Silicon RF Transistor 4 • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • fT= 8 GHz F = dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No. 5611/006 Type Variant No. 06 BFY193 3 ESD Electrostatic discharge sensitive device, observe handling precautions! Type BFY193 ql Marking Ordering Code see below Pin Configuration 1 23 4 CEBE Package Micro-X1 ql Quality Level: P Professional Quality H High Rel Quality S Space Quality ES ESA Space Quality see order instructions for ordering example IFAG IMM RPD D HIR 1 of 4 V2, February 2011 BFY193 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO Collector-emitter voltage, VBE=0 VCES Collector-base voltage VCBO Emitter-base voltage VEBO Collector current Base current Total power dissipation, Ptot TS 104°C 2 , 3 Junction temperature C Operating temperature range C Storage temperature range Tstg C Thermal Resistance Junction-soldering point 3 Rth JS < 165 Notes. 1 The maximum permissible base current for VFBE measurements is 30mA spotmeasurement duration < 1s 2 At TS = + 104 °C. For TS > + 104 °C derating is required. 3 TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes This Test assures V BR CE0 > 12V IFAG IMM RPD D HIR Symbol min. Values Unit typ. max. ICBO

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HiRel NPN Silicon RF Transistor
4
• HiRel Discrete and Microwave Semiconductor
• For low noise, high-gain amplifiers up to 2GHz.
• For linear broadband amplifiers
• Hermetically sealed microwave package
• fT= 8 GHz

F = dB at 2 GHz

Space Qualified

ESA/SCC Detail Spec. No. 5611/006 Type Variant No. 06

BFY193 3

ESD Electrostatic discharge sensitive device, observe handling precautions!

Type BFY193 ql
Marking Ordering Code
see below

Pin Configuration 1 23 4 CEBE

Package Micro-X1
ql Quality Level:

P Professional Quality H High Rel Quality S Space Quality ES ESA Space Quality
see order instructions for ordering example

IFAG IMM RPD D HIR
1 of 4

V2, February 2011

BFY193

Maximum Ratings

Parameter

Symbol Values

Unit

Collector-emitter voltage

VCEO

Collector-emitter voltage, VBE=0

VCES

Collector-base voltage

VCBO

Emitter-base voltage

VEBO

Collector current Base current

Total power dissipation,

Ptot

TS 104°C 2 , 3

Junction temperature
C

Operating temperature range
C

Storage temperature range

Tstg
C

Thermal Resistance

Junction-soldering point 3

Rth JS
< 165

Notes. 1 The maximum permissible base current for VFBE measurements is 30mA spotmeasurement duration < 1s 2 At TS = + 104 °C. For TS > + 104 °C derating is required. 3 TS is measured on the collector lead at the soldering point to the pcb.

Electrical Characteristics at TA=25°C unless otherwise specified Parameter

DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA Collector-base cutoff current VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes This Test assures V BR CE0 > 12V

IFAG IMM RPD D HIR

Symbol min.

Values

Unit
typ. max.

ICBO

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Datasheet ID: BFY193PZZZA1 637689