ISL9K860P3

ISL9K860P3 Datasheet

ISL9K860P3

Part	Datasheet
ISL9K860P3	ISL9K860P3 (pdf)

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ISL9K860P3 April 2002 ISL9K860P3 8A, 600V Stealth Dual Diode This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49409. Package JEDEC TO-220AB CATHODE FLANGE ANODE 2 CATHODE ANODE 1 Device Maximum Ratings per leg TC= 25°C unless otherwise noted Parameter Ratings Units VRRM VRWM VR IF AV DC Blocking Voltage Average Rectified Forward Current TC = 147oC Total Device Current Both Legs IFRM IFSM PD EAVL TJ, TSTG TL TPKG Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334 -55 to 175 CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation ISL9K860P3 Package Marking and Ordering Information Device Marking K860P3 Device ISL9K860P3 Package TO-220AB Tape Width - Quantity - Electrical Characteristics per leg TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics VR = 600V TC = 25°C TC = 125°C - 100 µA On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25°C TC = 125°C - V - V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A Switching Characteristics IF = 1A, dIF/dt = 100A/µs, VR = 30V 18 25 ns IF = 8A, dIF/dt = 100A/µs, VR = 30V 21 30 ns trr IRRM QRR IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C trr S IRRM QRR IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C - 150 - trr S IRRM QRR IF = 8A, dIF/dt = 600A/µs, VR = 390V, TC = 125°C 195 - dIM/dt Maximum di/dt during tb - 500 - A/µs Thermal Characteristics Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220

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ISL9K860P3

April 2002

ISL9K860P3
8A, 600V Stealth Dual Diode

This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.

Formerly developmental type TA49409.

Package

JEDEC TO-220AB

CATHODE FLANGE

ANODE 2 CATHODE ANODE 1

Device Maximum Ratings per leg TC= 25°C unless otherwise noted

Parameter

Ratings

Units

VRRM VRWM

VR IF AV

DC Blocking Voltage Average Rectified Forward Current TC = 147oC Total Device Current Both Legs

IFRM IFSM PD EAVL TJ, TSTG TL TPKG

Repetitive Peak Surge Current 20kHz Square Wave Nonrepetitive Peak Surge Current Halfwave 1 Phase 60Hz Power Dissipation Avalanche Energy 1A, 40mH Operating and Storage Temperature Range Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s Package Body for 10s, See Techbrief TB334
-55 to 175

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation

ISL9K860P3
Package Marking and Ordering Information

Device Marking K860P3

Device ISL9K860P3

Package TO-220AB

Tape Width -

Quantity -

Electrical Characteristics per leg TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off State Characteristics

VR = 600V

TC = 25°C TC = 125°C
- 100 µA

On State Characteristics

VF Instantaneous Forward Voltage

IF = 8A

TC = 25°C TC = 125°C
- V - V

Dynamic Characteristics

CJ Junction Capacitance

VR = 10V, IF = 0A

Switching Characteristics

IF = 1A, dIF/dt = 100A/µs, VR = 30V
18 25 ns

IF = 8A, dIF/dt = 100A/µs, VR = 30V
21 30 ns
trr IRRM QRR

IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C
trr S

IRRM QRR

IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C
- 150 -
trr S

IRRM QRR

IF = 8A, dIF/dt = 600A/µs, VR = 390V, TC = 125°C
195 -
dIM/dt Maximum di/dt during tb
- 500 - A/µs

Thermal Characteristics

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220

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Datasheet ID: ISL9K860P3 634081