PTFA260851E V1

PTFA260851E V1 Datasheet

PTFA260851E PTFA260851F

Part	Datasheet
PTFA260851E V1	PTFA260851E V1 (pdf)

Related Parts	Information
PTFA260851F V1 R250	PTFA260851F V1 R250
PTFA260851F V1	PTFA260851F V1
PTFA260851E V1 R250	PTFA260851E V1 R250

PDF Datasheet Preview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 2700 MHz PTFA260851E PTFA260851F The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2 PTFA260851F Package H-31248-2 Efficiency % EVM dBc WiMAX EVM and Efficiency vs. Output Power VDS = 28 V, IDQ = 900 mA Efficiency 15 20 25 30 35 40 45 Output Power dBm • Thermally-enhanced, Pb-free and RoHS-compliant packages • Broadband internal matching • Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = dB • Typical CW performance, 2680 MHz, 28 V - Output power at = 100 W - Efficiency = 47% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 28 V, 85 W CW output power RF Characteristics WiMAX Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = MHz, sample rate = 4 MHz Characteristic Gain Drain Efficiency Error Vector Magnitude Symbol Min Typ ηD EVM Unit dB % dB All published data at TCASE = 25°C unless otherwise indicated See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet 1 of 11 Confidential, Limited Internal Distribution RF Characteristics cont. Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, = 2680 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion dBm PEP Symbol Min PTFA260851E PTFA260851F Unit DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current Ordering Information Type and Version PTFA260851E V1 PTFA260851F V1 Package Type H-30248-2 H-31248-2 Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended Marking PTFA260851E PTFA260851F See Infineon distributor for future availability. Data Sheet 2 of 11 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA260851E PTFA260851F Gain dB Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 900 mA, = GHz 14 Gain 11 Efficiency 10 25 30 35 40 45 50 Output Power dBm 60 50 40 30 20 10 0 55 Drain Efficiency % Intermodulation Distortion dBc Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = W 3rd Order -30 -40 5th -50 7th -60 2580 2600 2620 2640 2660 2680 2700 2720 Frequency MHz Gain dB , Return Loss dB Broadband Performance VDD = 28 V, IDQ = 900 m A, POUT = W 20 Gain -10 Input Return Loss -30 2590 2610 2630 2650 50 45 40 35 Efficiency 30 25 20 15 10 5 0 2670 2690 2710 Frequency MHz Drain Efficiency % IM3, 5, 7 dBc Performance, various voltages IDQ = 900 m A, = GHz, tone spacing = 1 MHz VDD = 26 V VDD = 28 V VDD = 32 V -50 IM5 -60 IM7 Output Power dBm Data Sheet 3 of 11 Confidential, Limited Internal Distribution

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Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 2700 MHz

PTFA260851E PTFA260851F

The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.

PTFA260851E Package H-30248-2

PTFA260851F Package H-31248-2

Efficiency % EVM dBc

WiMAX EVM and Efficiency vs. Output Power

VDS = 28 V, IDQ = 900 mA

Efficiency
15 20 25 30 35 40 45

Output Power dBm
• Thermally-enhanced, Pb-free and RoHS-compliant packages
• Broadband internal matching
• Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = dB
• Typical CW performance, 2680 MHz, 28 V - Output power at = 100 W - Efficiency = 47%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 28 V, 85 W CW output power

RF Characteristics

WiMAX Measurements not subject to production by design/characterization in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = MHz, sample rate = 4 MHz

Characteristic Gain Drain Efficiency Error Vector Magnitude

Symbol Min Typ
ηD EVM

Unit dB % dB

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet
1 of 11

Confidential, Limited Internal Distribution

RF Characteristics cont.

Two-tone Measurements tested in Infineon test fixture VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, = 2680 MHz, tone spacing = 1 MHz

Characteristic Gain Drain Efficiency Intermodulation Distortion
dBm PEP

Symbol Min

PTFA260851E PTFA260851F

Unit

DC Characteristics

Characteristic Drain-Source Breakdown Voltage Drain Leakage Current

On-State Resistance Operating Gate Voltage Gate Leakage Current
Ordering Information

Type and Version PTFA260851E V1 PTFA260851F V1

Package Type H-30248-2 H-31248-2

Package Description Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended

Marking PTFA260851E PTFA260851F
*See Infineon distributor for future availability. Data Sheet
2 of 11

Confidential, Limited Internal Distribution

Typical Performance data taken in a production test fixture

PTFA260851E PTFA260851F

Gain dB

Gain & Efficiency vs. Output Power VDD = 28 V, IDQ = 900 mA, = GHz
14 Gain
11 Efficiency
10 25
30 35 40 45 50 Output Power dBm
60 50 40 30 20 10 0 55

Drain Efficiency % Intermodulation Distortion dBc

Broadband Performance VDD = 28 V, IDQ = 900 mA, POUT = W
3rd Order -30
-40 5th
-50 7th
-60 2580 2600 2620 2640 2660 2680 2700 2720 Frequency MHz

Gain dB , Return Loss dB

Broadband Performance VDD = 28 V, IDQ = 900 m A, POUT = W
20 Gain
-10 Input Return Loss
-30 2590 2610 2630 2650
50 45 40 35 Efficiency 30 25 20 15 10 5 0 2670 2690 2710

Frequency MHz

Drain Efficiency % IM3, 5, 7 dBc

Performance, various voltages IDQ = 900 m A, = GHz, tone spacing = 1 MHz

VDD = 26 V

VDD = 28 V

VDD = 32 V
-50 IM5
-60 IM7

Output Power dBm

Data Sheet
3 of 11

Confidential, Limited Internal Distribution

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Datasheet ID: PTFA260851EV1 638515