MIO 2400-17E10
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MIO2400-17E10 (pdf) |
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MIO 2400-17E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 2400 A VCES = 1700 V VCE sat typ. = V IGBT Symbol VCES VGES IC80 ICM tSC VCE sat VGE th ICES IGES tFeatures Conditions u VGE= 0 V o TC = 80°C - tp = 1 ms TC = 80°C VCC = 1000 V VCEM CHIP = <1700 V; e VGE < 15 V TVJ < 125°C Maximum Ratings 1700 ± 20 2400 4800 a s Conditions Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator h IC = 2400 A VGE = 15 V TVJ = 25°C TVJ = 125°C p IC = 240 mA VCE = VGE VCE = 1700 V VGE = 0 V TVJ = 125°C 120 mA VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA td on tr td off tf Eon Eoff Inductive load TVJ = 125°C VGE = ±15 V VCC = 900 V IC = 2400 A RG = Ω; = 60 nH 1050 Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz |
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