IRGP4750DPbF IRGP4750D-EPbF
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IRGP4750DPBF (pdf) |
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IRGP4750D-EPBF |
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IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC TJ max = 175°C VCE ON typ. = 1.7V IC = 35A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE ON and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE ON Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode n-channel G Gate IRGP4750DPbF C Collector E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4750DPbF IRGP4750D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube Tube Orderable Part Number IRGP4750DPbF IRGP4750D-EPbF Absolute Maximum Ratings Parameter VCES IC TC = 25°C IC TC = 100°C ICM ILM IF TC = 25°C IF TC = 100°C IFM VGE PD TC = 25°C PD TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 70 50 105 140 80 50 140 ±20 273 136 -40 to +175 300 in. 1.6mm from case 10 lbf•in N•m Units V Thermal Resistance Parameter IGBT Diode Thermal Resistance Junction-to-Case- each IGBT Thermal Resistance Junction-to-Case- each Diode Thermal Resistance, Case-to-Sink flat, greased surface Thermal Resistance, Junction-to-Ambient typical socket mount |
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