MPS6518

MPS6518 Datasheet

MPS6518

Part	Datasheet
MPS6518	MPS6518 (pdf)

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MPS6518 MPS6518 Discrete POWER & Signal Technologies TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO VEBO IC TJ, Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 40 200 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPS6518 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation MPS6518 PNP General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V BR CEO Collector-Emitter Breakdown Voltage V BR EBO ICBO Emitter-Base Breakdown Voltage Collector Cutoff Current IC = mA, IB = 0 IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 60°C

PDF Datasheet Preview

MPS6518

MPS6518

Discrete POWER & Signal Technologies

TO-92

PNP General Purpose Amplifier

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process See 2N3906 for characteristics.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Parameter

Value

VCEO VEBO IC TJ, Tstg

Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
40 200 -55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

MPS6518 625 200

Units

V mA °C

Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation

MPS6518

PNP General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V BR CEO

Collector-Emitter Breakdown Voltage*

V BR EBO ICBO

Emitter-Base Breakdown Voltage Collector Cutoff Current

IC = mA, IB = 0

IE = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 60°C

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Datasheet ID: MPS6518 634438