IPB26CNE8N G

IPB26CNE8N G Datasheet

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Part	Datasheet
IPB26CNE8N G	IPB26CNE8N G (pdf)

Related Parts	Information
IPI26CNE8N G	IPI26CNE8N G

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IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max TO252 ID 85 V 25 35 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package Marking PG-TO263-3 26CNE8N PG-TO252-3 25CNE8N PG-TO262-3 26CNE8N PG-TO220-3 26CNE8N PG-TO251-3 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C Avalanche energy, single pulse I D=35 A, R GS=25 dv /dt I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage3 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V 35 25 140 65 ±20 71 -55 175 55/175/56 mJ kV/µs V W °C

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IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Power-Transistor

Features
• N-channel, normal level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max TO252 ID
85 V 25 35 A
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification

Type

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Package Marking

PG-TO263-3 26CNE8N

PG-TO252-3 25CNE8N

PG-TO262-3 26CNE8N

PG-TO220-3 26CNE8N

PG-TO251-3 25CNE8N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Value

Unit

Continuous drain current

T C=25 °C

T C=100 °C

Pulsed drain current2

I D,pulse T C=25 °C

Avalanche energy, single pulse

I D=35 A, R GS=25
dv /dt

I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C

Gate source voltage3

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1
1 J-STD20 and JESD22
2 see figure 3 Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
35 25 140 65
±20 71 -55 175 55/175/56
mJ kV/µs V W °C

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Datasheet ID: IPB26CNE8NG 638298