SPB80N04S2L-03
SPB80N04S2L-03 Datasheet
SPP80N04S2L-03 SPB80N04S2L-03
| Part | Datasheet |
|---|---|
SPB80N04S2L-03 |
SPB80N04S2L-03 (pdf) |
| Related Parts | Information |
|---|---|
|
SPP80N04S2L-03 |
SPP80N04S2L-03 |
| PDF Datasheet Preview |
|---|
| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated SPP80N04S2L-03 SPB80N04S2L-03 Product Summary RDS on max. SMD version P- TO263 -3-2 P- TO220 -3-1 Type SPP80N04S2L-03 SPB80N04S2L-03 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4261 Q67040-S4262 Marking 2N04L03 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC = 25 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, IS=80A, VDS=32V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 80 320 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-08 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPP80N04S2L-03 SPB80N04S2L-03 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0V, ID=1mA |
| More datasheets: C167CSLMCAFXQLA2 | C167CSLMCAKXUMA2 | C167CSL33MCAKXUMA2 | C167CSL33MCAFXUMA2 | K167CSLMCAZNP | C167CSL40MCAKXQLA1 | C167CSL40MCAKXUMA2 | C167CSL40MCAKXQLA2 | C167CSLMCABXQLA2 | C167CSLMCABXUMA2 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SPB80N04S2L-03 Datasheet file may be downloaded here without warranties.