IPS031GTR

IPS031GTR Datasheet

IPS031G/IPS032G

Part	Datasheet
IPS031GTR	IPS031GTR (pdf)

Related Parts	Information
IPS032G	IPS032G
IPS031G	IPS031G

PDF Datasheet Preview
Data Sheet No.PD 60151-J IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH • Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. Typical Connection Product Summary Rds on V clamp Ishutdown Ton/Toff 1.5µs Packages 8-Lead SOIC IPS031G 16-Lead SOIC IPS032G Dual Load R in series if needed control S Logic signal Refer to lead assignment for correct pin assignment I31PS031G/IPS032G Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. TAmbient = 25oC unless otherwise specified . PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability Symbol Parameter Min. Maximum drain to source voltage Maximum input voltage Iin, max Maximum IN current Isd cont. Diode max. continuous current 1 rth=125oC/W IPS031G for all sd mosfets, rth=85oC/W IPS032G Isd pulsed Diode max. pulsed current 1 for ea. mosfet Maximum power dissipation 1 rth=125oC/W IPS031G for all Pd mosfets, rth=85oC/W IPS032G ESD1 Electrostatic discharge voltage Human Body ESD2 Electrostatic discharge voltage Machine Model T stor. Max. storage temperature Tj max. Max. junction temperature Max. 47 7 +10

PDF Datasheet Preview

Data Sheet No.PD 60151-J

IPS031G/IPS032G

SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH
• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection

The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

Typical Connection

Product Summary

Rds on

V clamp

Ishutdown

Ton/Toff
1.5µs

Packages
8-Lead SOIC IPS031G
16-Lead SOIC IPS032G Dual

Load

R in series
if needed
control S

Logic signal

Refer to lead assignment for correct pin assignment

I31PS031G/IPS032G

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. TAmbient = 25oC unless otherwise specified . PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability

Symbol Parameter

Min.

Maximum drain to source voltage

Maximum input voltage

Iin, max Maximum IN current

Isd cont. Diode max. continuous current 1
rth=125oC/W IPS031G
for all sd mosfets, rth=85oC/W IPS032G

Isd pulsed Diode max. pulsed current 1 for ea. mosfet

Maximum power dissipation 1
rth=125oC/W IPS031G
for all Pd mosfets, rth=85oC/W IPS032G

ESD1 Electrostatic discharge voltage Human Body

ESD2 Electrostatic discharge voltage Machine Model

T stor. Max. storage temperature

Tj max. Max. junction temperature

Max. 47 7 +10

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPS031GTR Datasheet file may be downloaded here without warranties.

Datasheet ID: IPS031GTR 638249