BTS133 E3045A

BTS133 E3045A Datasheet


Smart Low Side Power Switch HITFET BTS 133

Part Datasheet
BTS133 E3045A BTS133 E3045A BTS133 E3045A (pdf)
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PDF Datasheet Preview
Smart Low Side Power Switch HITFET BTS 133

Features
• Logic Level Input
• Input Protection ESD
•=Thermal shutdown with latch
• Green product RoHS compliant
• Short circuit and Overload protection
• Overvoltage protection
• Current limitation
• Status feedback with external input resistor
• Analog driving possible
• AEC qualified
• Green product RoHS compliant

Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy

VDS RDS on I D lim I D ISO EAS
60 V 50 21 A 7A 2000 mJ

Application
• All kinds of resistive, inductive and capacitive loads in switching or linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

N channel vertical power FET in Smart chip on chip technology. Providing embedded protection functions.

LOAD
dv/dt lim itation

C u rre n t lim itation

O ve rvo lta g e protection

D ra in 2

O v e rlo a d p ro te c tio n

O ve rtem perature
p ro te c tio n

SShhoorrtt cciirrccuuiitt pprrootteeccttiioonn

Source

H IT F E T

Datasheet

Smart Low Side Power Switch HITFET BTS 133

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Drain source voltage

Drain source voltage for short circuit protection Continuous input current 1
-0.2V VIN 10V VIN < -0.2V or VIN > 10V

VDS SC IIN

Operating temperature

Storage temperature

Tstg

Power dissipation

Ptot

TC = 25 °C

Unclamped single pulse inductive energy ID ISO = 7 A

Electrostatic discharge voltage Human Body Model VESD according to MIL STD 883D, method and

EOS/ESD assn. standard S5.1 - 1993

Load dump protection VLoadDump2 = VA + VS VIN=low or high VA=13.5 V td = 400 ms, RI = 2 ID=0,5*7A td = 400 ms, RI = 2 ID= 7A

Value 60 32
no limit | IIN | 2 - 40 +150 - 55 +150
2000
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Datasheet ID: BTS133E3045A 637887