IPD50R520CP
Part | Datasheet |
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IPD50R520CP (pdf) |
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Type CoolMOSTM Power Transistor Package • Lowest figure of merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Pb-free lead plating RoHS compliant • Quailfied according to JEDEC1 for target applications Product Summary V DS R DS on ,max Q g,typ IPD50R520CP 550 V 13 nC PG-TO252 CoolMOS CP is designed for • Hard- & Softswitching SMPS topologies • DCM PFC for Lamp ballast • PWM for Lamp Ballast, PDP and LCD TV Type IPD50R520CP Package PG-TO252 Marking 5R520P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2 ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive 2 ,3 AR Avalanche current, repetitive 2 ,3 AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt I D=2.5 A, V DD=50 V I D=2.5 A, V DD=50 V V DS=0...400 V Gate source voltage static AC f >1 Hz Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Value 15 166 50 ±20 ±30 66 -55 150 Unit A |
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