IPP05CN10L G

IPP05CN10L G Datasheet

IPP05CN10L G

Part	Datasheet
IPP05CN10L G	IPP05CN10L G (pdf)

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Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on Product Summary V DS R DS on ,max ID • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification Type IPP05CN10L G IPP05CN10L G 100 V 100 A Package Marking PG-TO220-3 05CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current3 I D,pulse T C=25 °C Avalanche energy, single pulse I D=100 A, R GS=25 dv /dt I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C Gate source voltage 4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 100 400 826 ±20 300 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-10-31 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5

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Power-Transistor

Features
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

Product Summary V DS R DS on ,max ID
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification

Type

IPP05CN10L G

IPP05CN10L G
100 V 100 A

Package Marking

PG-TO220-3 05CN10L

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

T C=100 °C

Pulsed drain current3

I D,pulse T C=25 °C

Avalanche energy, single pulse

I D=100 A, R GS=25
dv /dt

I D=100 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C

Gate source voltage 4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 100 400 826
±20 300 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-10-31

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case Thermal resistance, junction - ambient

R thJC R thJA
minimal footprint 6 cm2 cooling area5

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Datasheet ID: IPP05CN10LG 638233