TIS97_J35Z
TIS97_J35Z Datasheet
TIS97
| Part | Datasheet |
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TIS97_J35Z |
TIS97_J35Z (pdf) |
| Related Parts | Information |
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TIS97 |
TIS97 |
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TIS97_D26Z |
TIS97_D26Z |
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TIS97_D74Z |
TIS97_D74Z |
| PDF Datasheet Preview |
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| TIS97 TIS97 Discrete POWER & Signal Technologies TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process See PN100 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Value VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC TJ, Tstg Collector Current - Continuous Operating and Storage Junction Temperature Range 500 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 150 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TIS97 625 200 Units V mA °C Units mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation TIS97 NPN General Purpose Amplifier continued Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS |
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