M25PE10-VD11

M25PE10-VD11 Datasheet

M25PE20, M25PE10 Serial Flash Embedded Memory Features

Part	Datasheet
M25PE10-VD11	M25PE10-VD11 (pdf)

Related Parts	Information
M25PE20-V6D11	M25PE20-V6D11

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M25PE20, M25PE10 Serial Flash Embedded Memory Features M25PE20/M25PE10 2Mb and 1Mb 3V NOR Serial Flash Memory Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout • 1Mb or 2Mb of page-erasable Flash memory • 2.7V to 3.6V single supply voltage • SPI bus compatible serial interface • 75 MHz clock rate maximum • Page size 256 bytes Page write in 11ms TYP Page program in 0.8ms TYP Page erase in 10ms TYP • Subsector erase 32Kb Sector erase 512Kb Bulk erase 1Mb for M25PE10 2Mb for M25PE20 • Deep power-down mode 1µA TYP • Electronic signature JEDEC standard 2-byte signature 8012h for M25PE20 8011h for M25PE10 • Software write-protection on a 64KB sector basis • More than 100,000 write cycles per sector • More than 20 years of data retention • Hardware write protection of the memory area se- lected using the BP0 and BP1 bits • Packages RoHS compliant SO8N MN 150 mil width VFQFPN8 MP 6mm x 5mm • Automotive grade parts available Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. M25PE20, M25PE10 Serial Flash Embedded Memory Features Contents Functional Description 5 Signal Descriptions 7 Serial Peripheral Interface Modes 8 Operating Features 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Features List of Figures Figure 1 Logic Diagram 5 Figure 2 Pin Connections VFQFPN and SO 6 Figure 3 Bus Master and Memory Devices on the SPI Bus 9 Figure 4 SPI Modes 9 Figure 5 M25PE20 Block Diagram 15 Figure 6 M25PE10 Block Diagram 17 Figure 7 WRITE ENABLE Command Sequence 20 Figure 8 WRITE DISABLE Command Sequence 21 Figure 9 READ IDENTIFICATION Command Sequence 23 Figure 10 READ STATUS REGISTER Command Sequence 23 Figure 11 Status Register Format 24 Figure 12 WRITE STATUS REGISTER Command Sequence 25 Figure 13 READ DATA BYTES Command Sequence 27 Figure 14 READ DATA BYTES at HIGHER SPEED Command Sequence 28 Figure 15 READ LOCK REGISTER Command Sequence 29 Figure 16 PAGE WRITE Command Sequence 31 Figure 17 PAGE PROGRAM Command Sequence 33 Figure 18 WRITE to LOCK REGISTER Instruction Sequence 34 Figure 19 PAGE ERASE Command Sequence 35 Figure 20 SUBSECTOR ERASE Command Sequence 36 Figure 21 SECTOR ERASE Command Sequence 37 Figure 22 BULK ERASE Command Sequence 38 Figure 23 DEEP POWER-DOWN Command Sequence 39 Figure 24 RELEASE from DEEP POWER-DOWN Command Sequence 40 Figure 25 Power-Up Timing 42 Figure 26 AC Measurement I/O Waveform 46 Figure 27 Serial Input Timing 49 Figure 28 Write Protect Setup and Hold Timing 49 Figure 29 Output Timing 50 Figure 30 Reset AC Waveform 51 Figure 31 SO8N 150mils Body Width 52 Figure 32 VFQFPN8 MLP8 6mm x 5mm 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Features List of Tables Table 1 Signal Names 6 Table 2 Signal Descriptions 7 Table 3 SPI Modes 8 Table 4 Software Protection Truth Table, 64KB granularity sectors 0-3 for M25PE20 sectors 0-1 for M25PE10 3 Table 5 Protected Area Sizes M25PE20 13 Table 6 Protected Area Sizes M25PE10 13 Table 7 M25PE20 Memory Organization 14 Table 8 M25PE10 Memory Organization 16 Table 9 Command Set Codes 19 Table 10 READ IDENTIFICATION Data Out Sequence 22 Table 11 Status Register Protection Modes 26 Table 12 Lock Register Out 29 Table 13 Lock Register In 34 Table 14 Power-up Timing and VWI Threshold 42 Table 15 Device Status After a RESET# LOW Pulse 43 Table 16 Absolute Maximum Ratings 44 Table 17 Operating Conditions 44 Table 18 DC Characteristics 45 Table 19 AC Measurement Conditions 46 Table 20 Capacitance 46 Table 21 AC Specifications 50 MHz operation 47 Table 22 AC Specifications 75MHz operation 48 Table 23 Reset Conditions 50 Table 24 Timings After a RESET# LOW Pulse 50 Table 25 Standard Part Number Information Scheme 54 Table 26 Automotive Part Number Information Scheme 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Functional Description Functional Description The M25PE20 and M25PE10 are 2Mb 256Kb x 8 bit and 1Mb 128Kb x 8 bit serial-paged Flash memory devices, respectively, accessed by a high-speed SPI-compatible bus. The memories can be written or programmed 1 to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle. The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 1024 pages, or 262,144 bytes. The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 512 pages, or 131,072 bytes. The memories can be erased one page at a time using the PAGE ERASE command, one sector at a time using the SECTOR ERASE command, one subsector at a time using the SUBSECTOR ERASE command, or as a whoe using the BULK ERASE command. The memories can be write-protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on application needs. The protection granularity is 64KB sector granularity . The entire memory array is partitioned into 4KB subsectors. Figure 1 Logic Diagram DQ0 C S# W# RESET# Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Functional Description Table 1 Signal Names Signal Name C DQ0 DQ1 S# W# RESET# VCC VSS Function Serial clock Serial data input Serial data output Chip select Write Protect Reset Supply voltage Ground Figure 2 Pin Connections VFQFPN and SO Direction Input Output Input TSL#/W# RESET# There is an exposed central pad on the underside of the VFQFPN package that is pulled internally to VSS and must not be connected to any other voltage or signal line on the PCB. The Package Mechanical section provides information on package dimensions and how to identify pin Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. Signal Descriptions M25PE20, M25PE10 Serial Flash Embedded Memory Signal Descriptions Table 2 Signal Descriptions Signal DQ1 DQ0 C S# RESET# W# VCC VSS Type Output Input Input Input Serial data The DQ1 output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock C . See Part Number Ordering Information for complete package names and details. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Package Dimensions Figure 32 VFQFPN8 MLP8 6mm x 5mm MAX/ 0 MIN 6 TYP C B M C A B TYP 5 TYP 2x C B Pin one indicator 12° 0 MIN/ MAX TYP C Notes All dimensions are in millimeters. See Part Number Ordering Information for complete package names and details. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. M25PE20, M25PE10 Serial Flash Embedded Memory Device Ordering Information Device Ordering Information Micron Serial NOR Flash memory is available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at To compare features and specifications by device type, visit Contact the factory for devices not found. For more information on how to identify products and top-side marking by the process identification letter, refer to technical note TN-12-24, Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product Families. Table 25 Standard Part Number Information Scheme Part Number Category Device type Density Operating voltage Package Device Grade Packing Option Plating technology Category Details M25PE = Page-erasable serial Flash memory 10 = 1Mb 128K x 8-bit 20 = 2Mb 256K x 8-bit V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MP = VFQFPN8 6 x 5mm MLP8 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Industrial temperature range to 125°C. Device tested with standard test flow. = Standard packing T = Tape and reel packing P or G = RoHS compliant Table 26 Automotive Part Number Information Scheme Part Number Category Device type Density Operating voltage Package Device Grade Packing Option Plating technology Lithography Automotive grade Category Details M25PE = Page-erasable serial Flash memory 10 = 1Mb 128K x 8-bit 20 = 2Mb 256K x 8-bit V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Industrial temperature range to 125°C. Device tested with standard test flow. = Standard packing T = Tape and reel packing P = RoHS compliant B = 110nm, Fab.2 Diffusion Plant digit available only with Auto Product A = Automotive -40C to 85C together with Device Grade = '6' to order Auto Specific Product . Device tested with high reliability certified flow. = Automotive -40C to 125C device. Note Grade 3 is only for 1Mb device. Notes Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved. • Eliminated 25 MHz and 33 MHz information. • Applied Micron branding. 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel 208-368-3900 Customer Comment Line 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some- times occur. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

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M25PE20, M25PE10 Serial Flash Embedded Memory Features

M25PE20/M25PE10 2Mb and 1Mb 3V NOR Serial Flash Memory

Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout
• 1Mb or 2Mb of page-erasable Flash memory
• 2.7V to 3.6V single supply voltage
• SPI bus compatible serial interface
• 75 MHz clock rate maximum
• Page size 256 bytes

Page write in 11ms TYP Page program in 0.8ms TYP Page erase in 10ms TYP
• Subsector erase 32Kb Sector erase 512Kb Bulk erase 1Mb for M25PE10 2Mb for M25PE20
• Deep power-down mode 1µA TYP
• Electronic signature JEDEC standard 2-byte signature 8012h for

M25PE20 8011h for M25PE10
• Software write-protection on a 64KB sector basis
• More than 100,000 write cycles per sector
• More than 20 years of data retention
• Hardware write protection of the memory area se-
lected using the BP0 and BP1 bits
• Packages RoHS compliant

SO8N MN 150 mil width VFQFPN8 MP 6mm x 5mm
• Automotive grade parts available

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.

M25PE20, M25PE10 Serial Flash Embedded Memory Features

Contents

Functional Description 5 Signal Descriptions 7 Serial Peripheral Interface Modes 8 Operating Features 10
Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M25PE20, M25PE10 Serial Flash Embedded Memory Features

List of Figures

Figure 1 Logic Diagram 5 Figure 2 Pin Connections VFQFPN and SO 6 Figure 3 Bus Master and Memory Devices on the SPI Bus 9 Figure 4 SPI Modes 9 Figure 5 M25PE20 Block Diagram 15 Figure 6 M25PE10 Block Diagram 17 Figure 7 WRITE ENABLE Command Sequence 20 Figure 8 WRITE DISABLE Command Sequence 21 Figure 9 READ IDENTIFICATION Command Sequence 23 Figure 10 READ STATUS REGISTER Command Sequence 23 Figure 11 Status Register Format 24 Figure 12 WRITE STATUS REGISTER Command Sequence 25 Figure 13 READ DATA BYTES Command Sequence 27 Figure 14 READ DATA BYTES at HIGHER SPEED Command Sequence 28 Figure 15 READ LOCK REGISTER Command Sequence 29 Figure 16 PAGE WRITE Command Sequence 31 Figure 17 PAGE PROGRAM Command Sequence 33 Figure 18 WRITE to LOCK REGISTER Instruction Sequence 34 Figure 19 PAGE ERASE Command Sequence 35 Figure 20 SUBSECTOR ERASE Command Sequence 36 Figure 21 SECTOR ERASE Command Sequence 37 Figure 22 BULK ERASE Command Sequence 38 Figure 23 DEEP POWER-DOWN Command Sequence 39 Figure 24 RELEASE from DEEP POWER-DOWN Command Sequence 40 Figure 25 Power-Up Timing 42 Figure 26 AC Measurement I/O Waveform 46 Figure 27 Serial Input Timing 49 Figure 28 Write Protect Setup and Hold Timing 49 Figure 29 Output Timing 50 Figure 30 Reset AC Waveform 51 Figure 31 SO8N 150mils Body Width 52 Figure 32 VFQFPN8 MLP8 6mm x 5mm 53

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M25PE20, M25PE10 Serial Flash Embedded Memory Features

List of Tables

Table 1 Signal Names 6 Table 2 Signal Descriptions 7 Table 3 SPI Modes 8 Table 4 Software Protection Truth Table, 64KB granularity sectors 0-3 for M25PE20 sectors 0-1 for M25PE10 3 Table 5 Protected Area Sizes M25PE20 13 Table 6 Protected Area Sizes M25PE10 13 Table 7 M25PE20 Memory Organization 14 Table 8 M25PE10 Memory Organization 16 Table 9 Command Set Codes 19 Table 10 READ IDENTIFICATION Data Out Sequence 22 Table 11 Status Register Protection Modes 26 Table 12 Lock Register Out 29 Table 13 Lock Register In 34 Table 14 Power-up Timing and VWI Threshold 42 Table 15 Device Status After a RESET# LOW Pulse 43 Table 16 Absolute Maximum Ratings 44 Table 17 Operating Conditions 44 Table 18 DC Characteristics 45 Table 19 AC Measurement Conditions 46 Table 20 Capacitance 46 Table 21 AC Specifications 50 MHz operation 47 Table 22 AC Specifications 75MHz operation 48 Table 23 Reset Conditions 50 Table 24 Timings After a RESET# LOW Pulse 50 Table 25 Standard Part Number Information Scheme 54 Table 26 Automotive Part Number Information Scheme 54

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M25PE20, M25PE10 Serial Flash Embedded Memory Functional Description

Functional Description

The M25PE20 and M25PE10 are 2Mb 256Kb x 8 bit and 1Mb 128Kb x 8 bit serial-paged Flash memory devices, respectively, accessed by a high-speed SPI-compatible bus.

The memories can be written or programmed 1 to 256 bytes at a time using the PAGE WRITE or PAGE PROGRAM command. The PAGE WRITE command consists of an integrated PAGE ERASE cycle followed by a PAGE PROGRAM cycle.

The M25PE20 memory is organized as 4 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 1024 pages, or 262,144 bytes.

The M25PE10 memory is organized as 2 sectors, each containing 256 pages. Each page is 256 bytes wide. The entire memory can be viewed as consisting of 512 pages, or 131,072 bytes.

The memories can be erased one page at a time using the PAGE ERASE command, one sector at a time using the SECTOR ERASE command, one subsector at a time using the SUBSECTOR ERASE command, or as a whoe using the BULK ERASE command.

The memories can be write-protected by either hardware or software using a mix of volatile and non-volatile protection features, depending on application needs. The protection granularity is 64KB sector granularity . The entire memory array is partitioned into 4KB subsectors.

Figure 1 Logic Diagram

DQ0 C S#

W# RESET#

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M25PE20, M25PE10 Serial Flash Embedded Memory Functional Description

Table 1 Signal Names

Signal Name C DQ0 DQ1 S# W# RESET# VCC VSS

Function Serial clock Serial data input Serial data output Chip select Write Protect Reset Supply voltage Ground

Figure 2 Pin Connections VFQFPN and SO

Direction Input Output Input

TSL#/W#

RESET#

There is an exposed central pad on the underside of the VFQFPN package that is pulled internally to VSS and must not be connected to any other voltage or signal line on the PCB. The Package Mechanical section provides information on package dimensions and how to identify pin

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Signal Descriptions

M25PE20, M25PE10 Serial Flash Embedded Memory Signal Descriptions

Table 2 Signal Descriptions

Signal DQ1 DQ0 C S#

RESET#

W# VCC VSS

Type Output Input

Input

Input

Serial data The DQ1 output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock C .
See Part Number Ordering Information for complete package names and details.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

M25PE20, M25PE10 Serial Flash Embedded Memory Package Dimensions

Figure 32 VFQFPN8 MLP8 6mm x 5mm

MAX/ 0 MIN
6 TYP

C B M C A B

TYP 5 TYP
2x C B

Pin one indicator
12°
0 MIN/ MAX

TYP C
Notes All dimensions are in millimeters. See Part Number Ordering Information for complete package names and details.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.
M25PE20, M25PE10 Serial Flash Embedded Memory Device Ordering Information
Device Ordering Information

Micron Serial NOR Flash memory is available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at To compare features and specifications by device type, visit Contact the factory for devices not found. For more information on how to identify products and top-side marking by the process identification letter, refer to technical note TN-12-24, Serial Flash Memory Device Marking for the M25P, M25PE, M25PX, and N25Q Product Families.

Table 25 Standard Part Number Information Scheme

Part Number Category

Device type Density

Operating voltage Package

Device Grade

Packing Option

Plating technology

Category Details M25PE = Page-erasable serial Flash memory 10 = 1Mb 128K x 8-bit 20 = 2Mb 256K x 8-bit V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width MP = VFQFPN8 6 x 5mm MLP8 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Industrial temperature range to 125°C. Device tested with standard test flow. = Standard packing T = Tape and reel packing P or G = RoHS compliant

Table 26 Automotive Part Number Information Scheme

Part Number Category

Device type Density

Operating voltage Package Device Grade

Packing Option

Plating technology Lithography Automotive grade

Category Details M25PE = Page-erasable serial Flash memory 10 = 1Mb 128K x 8-bit 20 = 2Mb 256K x 8-bit V = VCC = 2.7V to 3.6V MN = SO8N 150 mils width 6 = Industrial temperature range to 85°C. Device tested with standard test flow. 3 = Industrial temperature range to 125°C. Device tested with standard test flow. = Standard packing T = Tape and reel packing P = RoHS compliant B = 110nm, Fab.2 Diffusion Plant digit available only with Auto Product A = Automotive -40C to 85C together with Device Grade = '6' to order Auto Specific Product . Device tested with high reliability certified flow. = Automotive -40C to 125C device.

Note Grade 3 is only for 1Mb device.

Notes

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.
• Eliminated 25 MHz and 33 MHz information.
• Applied Micron branding.
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel 208-368-3900 Customer Comment Line 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2013 Micron Technology, Inc. All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived M25PE10-VD11 Datasheet file may be downloaded here without warranties.

Datasheet ID: M25PE10-VD11 648285