SGB20N60ATMA1

SGB20N60ATMA1 Datasheet

SGB20N60

Part	Datasheet
SGB20N60ATMA1	SGB20N60ATMA1 (pdf)

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SGB20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-263-3-2 TO-263AB • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant • Complete product spectrum and PSpice Models : Type SGB20N60 VCE 600V VCE sat Tj Marking 20A 2.4V 150°C G20N60 Package PG-TO-263-3-2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature reflow soldering, MSL1 Symbol VCE IC ICpuls VGE EAS tSC Ptot Tj , Tstg Value Unit ±20 1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s. SGB20N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient1 Symbol RthJC RthJA Conditions Max. Value Unit Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Dynamic Characteristic V BR CES VCE sat VGE th ICES

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SGB20N60

Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time 10 µs
• Designed for:
- Motor controls - Inverter
• NPT-Technology for 600V applications offers - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability

PG-TO-263-3-2 TO-263AB
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant
• Complete product spectrum and PSpice Models :

Type SGB20N60

VCE 600V

VCE sat

Tj Marking
20A 2.4V 150°C G20N60

Package PG-TO-263-3-2

Maximum Ratings

Parameter

Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature reflow soldering, MSL1

Symbol VCE IC

ICpuls VGE EAS
tSC Ptot Tj , Tstg

Value

Unit
±20
1 J-STD-020 and JESD-022 2 Allowed number of short circuits <1000 time between short circuits >1s.

SGB20N60

Thermal Resistance

Parameter

Characteristic IGBT thermal resistance, junction case Thermal resistance, junction ambient1

Symbol RthJC RthJA

Conditions

Max. Value

Unit

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Conditions

Static Characteristic

Collector-emitter breakdown voltage Collector-emitter saturation voltage

Gate-emitter threshold voltage Zero gate voltage collector current

Gate-emitter leakage current Transconductance Dynamic Characteristic

V BR CES VCE sat

VGE th ICES

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Datasheet ID: SGB20N60ATMA1 638556