SGL40N150DTU

SGL40N150DTU Datasheet

SGL40N150D

Part	Datasheet
SGL40N150DTU	SGL40N150DTU (pdf)

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SGL40N150D SGL40N150D IGBT Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • High speed switching • Low saturation voltage VCE sat = V IC = 40A • High input impedance • Built-in fast recovery diode Home appliances, induction heaters, IH JAR, and microwave ovens. TO-264 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES ICM 1 IF IFM PD TJ Tstg Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes 1 Repetitive rating Pulse width limited by max. junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient SGL40N150D 1500 ± 25 40 20 120 10 100 200 80 -55 to +150 -55 to +150 Typ. ---- Max. Units V A W °C °C °C Units °C/W °C/W °C/W 2002 Fairchild Semiconductor Corporation SGL40N150D Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics

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SGL40N150D

SGL40N150D

IGBT

Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications.
• High speed switching
• Low saturation voltage VCE sat = V IC = 40A
• High input impedance
• Built-in fast recovery diode

Home appliances, induction heaters, IH JAR, and microwave ovens.

TO-264

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VCES VGES

ICM 1 IF IFM PD

TJ Tstg

Collector-Emitter Voltage

Gate-Emitter Voltage

Collector Current Collector Current Pulsed Collector Current

TC = 25°C TC = 100°C

Diode Continuous Forward Current Diode Maximum Forward Current

TC = 100°C

Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature

TC = 25°C TC = 100°C

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

Notes 1 Repetitive rating Pulse width limited by max. junction temperature

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

SGL40N150D 1500 ± 25 40 20 120 10 100 200 80
-55 to +150 -55 to +150

Typ. ----

Max.

Units V A W °C °C °C

Units °C/W °C/W °C/W
2002 Fairchild Semiconductor Corporation

SGL40N150D

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Parameter

Test Conditions

Min. Typ. Max. Units

Off Characteristics

BVCES ICES IGES

Collector-Emitter Breakdown Voltage Collector Cut-Off Current G-E Leakage Current

On Characteristics

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Datasheet ID: SGL40N150DTU 634748