IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1 Datasheet

IPD90R1K2C3

Part	Datasheet
IPD90R1K2C3ATMA1	IPD90R1K2C3ATMA1 (pdf)

Related Parts	Information
IPD90R1K2C3BTMA1	IPD90R1K2C3BTMA1

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IPD90R1K2C3 CoolMOS Power Transistor Features • Lowest figure-of-merit RON x Qg • Extreme dv/dt rated • High peak current capability Product Summary V DS T J=25°C R DS on ,max J=25°C Q g,typ 900 V 28 nC • Qualified according to JEDEC1 for target applications • Pb-free lead plating RoHS compliant available in Halogen free mold compounda • Ultra low gate charge PG-TO252 CoolMOS 900V is designed for • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPD90R1K2C3 Package PG-TO252 Marking 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C Pulsed drain current 2 I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t AR 2 ,3 E AR Avalanche current, repetitive t AR 2 ,3 I AR MOSFET dv /dt ruggedness dv /dt T C=100 °C T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V V DS=0...400 V Gate source voltage static AC f>1 Hz Power dissipation P tot T C=25 °C Operating and storage temperature T J, T stg Value 10 68 50 ±20 ±30 83 -55 150 a non-Halogen free OPN IPD90R1K2C3BT Halogen free OPN IPD90R1K2C3AT Unit A A V/ns V W °C 200183--0077--2391 Maximum ratings, at T J =25 °C, unless otherwise specified

PDF Datasheet Preview

IPD90R1K2C3

CoolMOS Power Transistor

Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability

Product Summary V DS T J=25°C R DS on ,max J=25°C Q g,typ
900 V 28 nC
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating RoHS compliant available in Halogen free mold compounda
• Ultra low gate charge

PG-TO252

CoolMOS 900V is designed for
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS

Type IPD90R1K2C3

Package PG-TO252

Marking 9R1K2C

Maximum ratings, at T J=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

Pulsed drain current 2

I D,pulse

Avalanche energy, single pulse

Avalanche energy, repetitive t AR 2 ,3 E AR Avalanche current, repetitive t AR 2 ,3 I AR

MOSFET dv /dt ruggedness
dv /dt

T C=100 °C T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V

V DS=0...400 V

Gate source voltage
static

AC f>1 Hz

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T J, T stg

Value 10 68 50 ±20 ±30 83
-55 150
a non-Halogen free OPN IPD90R1K2C3BT Halogen free OPN IPD90R1K2C3AT

Unit A

A V/ns V

W °C
200183--0077--2391

Maximum ratings, at T J =25 °C, unless otherwise specified

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Datasheet ID: IPD90R1K2C3ATMA1 638220