BG 3230 E6327

BG 3230 E6327 Datasheet

Part	Datasheet
BG 3230 E6327	BG 3230 E6327 (pdf)

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DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package • Integrated stabilized bias network • Integrated gate protection diodes • High gain, low noise figure • Improved cross modulation at gain reduction • High AGC-range BG3230 BG3230R RF Input BG3230_BG3230R Drain RF Output ESD Electrostatic discharge sensitive device, observe handling precaution! Type BG3230 BG3230R Package SOT363 Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D 5=G2 Marking 6=G1 KBs 6=G1** KIs * For amp. A ** for amp. B 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch Value 8 25 1 6 200 -55 150 Unit V mA V mW °C 2005-11-03 BG3230_BG3230R Thermal Resistance Parameter Channel - soldering point1 Symbol Rthchs Value Unit Electrical Characteristics Parameter Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 100 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current selfbiased VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, ID = 100 µA V BR DS +V BR G1SS 6 ±V BR G2SS 6 +IG1SS 50 µA ±IG2SS 50 nA IDSS 100 µA IDSO

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DUAL N-Channel MOSFET Tetrode
• Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
• Integrated stabilized bias network
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range

BG3230 BG3230R

RF Input

BG3230_BG3230R

Drain RF Output

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BG3230 BG3230R

Package SOT363

Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D** 5=G2

Marking 6=G1** KBs 6=G1** KIs
* For amp. A ** for amp. B
180° rotated tape loading orientation available

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature

VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch

Value 8 25 1 6 200
-55 150

Unit V mA

V mW °C
2005-11-03

BG3230_BG3230R

Thermal Resistance Parameter Channel - soldering point1

Symbol Rthchs

Value

Unit

Electrical Characteristics Parameter

Values

Unit
min. typ. max.

DC Characteristics Drain-source breakdown voltage ID = 100 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 Gate 2 source leakage current ±VG2S = 6 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Operating current selfbiased VDS = 5 V, VG2S = 4 V Gate2-source pinch-off voltage VDS = 5 V, ID = 100 µA

V BR DS
+V BR G1SS 6
±V BR G2SS 6
+IG1SS
50 µA
±IG2SS
50 nA

IDSS
100 µA

IDSO

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Datasheet ID: BG3230E6327 637692