IXTY1R4N60P

IXTY1R4N60P Datasheet

IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P

Part	Datasheet
IXTY1R4N60P	IXTY1R4N60P (pdf)

Related Parts	Information
IXTP1R4N60P	IXTP1R4N60P
IXTU1R4N60P	IXTU1R4N60P

PDF Datasheet Preview
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P V = 600 V DSS ID25 = A RDS on VDSS V VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TSOLD Weight Test Conditions TJ = 25° C to 175° C 25° 175° Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS di/dt A/µs, VDD TJ C, RG = 20 TC = 25° C mm from case for 10 s Plastic body for 10 s TO-220 TO-252 TO-251 Maximum Ratings TO-220 IXTP ±30 ±40 A TO-251 IXTU 50 -55 +150 150 -55 +150 V/ns W °C °C °C TO-252 IXTY 300 260 °C °C g = Gate S = Source D = Drain TAB = Drain Test Conditions TJ = 25° C, unless otherwise specified BVDSS

PDF Datasheet Preview

PolarHVTM Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

IXTP 1R4N60P IXTU 1R4N60P IXTY 1R4N60P

V = 600 V DSS

ID25 = A RDS on

VDSS V

VGS VGSM

ID25 IDM IAR EAR EAS
dv/dt

PD TJ TJM Tstg

TSOLD

Weight

Test Conditions

TJ = 25° C to 175° C
25°
175°

Continuous

Transient

TC = 25° C TC = 25° C, pulse width limited by TJM

TC = 25° C TC = 25° C TC = 25° C

IS di/dt A/µs, VDD TJ C, RG = 20

TC = 25° C
mm from case for 10 s Plastic body for 10 s

TO-220 TO-252 TO-251

Maximum Ratings TO-220 IXTP
±30
±40

A TO-251 IXTU
50 -55 +150
150 -55 +150

V/ns

W °C °C °C

TO-252 IXTY
300 260
°C °C
g = Gate

S = Source

D = Drain TAB = Drain

Test Conditions

TJ = 25° C, unless otherwise specified

BVDSS

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Datasheet ID: IXTY1R4N60P 644334