IPD12N03LB G
IPD12N03LB G Datasheet
IPD12N03LB G IPU12N03LB G
| Part | Datasheet |
|---|---|
IPD12N03LB G |
IPD12N03LB G (pdf) |
| PDF Datasheet Preview |
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| Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G Product Summary V DS R DS on ,max ID Type IPD12N03LB G IPS12N03LB G IPF12N03LB G IPU12N03LB G Package Marking PG-TO252-3-11 12N03LB PG-TO251-3-11 12N03LB PG-TO252-3-23 12N03LB PG-TO251-3-1 12N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C2 T C=100 °C T C=25 °C3 I D=30 A, R GS=25 dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 30 120 64 ±20 52 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPD12N03LB G IPU12N03LB G IPS12N03LB G IPF12N03LB G Parameter Symbol Conditions min. |
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