MT36HTF51272FY-80EE1D4

MT36HTF51272FY-80EE1D4 Datasheet

MT36HTF25672F 2GB MT36HTF51272F 4GB

Part	Datasheet
MT36HTF51272FY-80EE1D4	MT36HTF51272FY-80EE1D4 (pdf)

PDF Datasheet Preview
2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features DDR2 SDRAM FBDIMM MT36HTF25672F 2GB MT36HTF51272F 4GB • 240-pin, DDR2 fully buffered DIMM FBDIMM • Fast data transfer rates PC2-4200, PC2-5300, or PC2-6400 • 2GB 256 Meg x 72 , 4GB 512 Meg x 72 • Gb/s, 4 Gb/s, and Gb/s link transfer rates • High-speed, 1.5V differential, point-to-point link be- tween host memory controller and the advanced memory buffer AMB • Fault-tolerant can work around a bad bit lane in each direction • High-density scaling with up to eight FBDIMM devices per channel • SMBus interface to AMB for configuration register access • In-band and out-of-band command access • Deterministic protocol Enables memory controller to optimize DRAM accesses for maximum performance Delivers precise control and repeatable memory behavior • Automatic DDR2 SDRAM bus and channel calibration • Transmitter de-emphasis to reduce ISI • MBIST and IBIST test functions • Transparent mode for DRAM test support • VDD = VDDQ = 1.8V for DRAM • VREF = 0.9V SDRAM command and address termina- tion • VCC = 1.5V for AMB • VDDSPD = for AMB and EEPROM • Serial presence-detect SPD with EEPROM • Gold edge contacts • Dual rank • Supports 95°C operation with 2X refresh Figure 1 240-Pin FBDIMM MO-256 R/C H Module height 30.35mm 1.19in Options • Package 240-pin DIMM lead-free • Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 1 Marking -80E -667 -53E Note Not recommended for new designs. Micron Technology, Inc. reserves the right to change products or specifications without notice. 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -667 PC2-5300 -53E PC2-4200 Table 2 Addressing Parameter Refresh count Device bank address Device configuration Row address Column address Module rank address

PDF Datasheet Preview

2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features

DDR2 SDRAM FBDIMM

MT36HTF25672F 2GB MT36HTF51272F 4GB
• 240-pin, DDR2 fully buffered DIMM FBDIMM
• Fast data transfer rates PC2-4200, PC2-5300, or

PC2-6400
• 2GB 256 Meg x 72 , 4GB 512 Meg x 72
• Gb/s, 4 Gb/s, and Gb/s link transfer rates
• High-speed, 1.5V differential, point-to-point link be-
tween host memory controller and the advanced memory buffer AMB
• Fault-tolerant can work around a bad bit lane in each direction
• High-density scaling with up to eight FBDIMM devices per channel
• SMBus interface to AMB for configuration register access
• In-band and out-of-band command access
• Deterministic protocol

Enables memory controller to optimize DRAM accesses for maximum performance

Delivers precise control and repeatable memory behavior
• Automatic DDR2 SDRAM bus and channel calibration
• Transmitter de-emphasis to reduce ISI
• MBIST and IBIST test functions
• Transparent mode for DRAM test support
• VDD = VDDQ = 1.8V for DRAM
• VREF = 0.9V SDRAM command and address termina-
tion
• VCC = 1.5V for AMB
• VDDSPD = for AMB and EEPROM
• Serial presence-detect SPD with EEPROM
• Gold edge contacts
• Dual rank
• Supports 95°C operation with 2X refresh

Figure 1 240-Pin FBDIMM MO-256 R/C H

Module height 30.35mm 1.19in

Options
• Package 240-pin DIMM lead-free
• Frequency/CAS latency 2.5ns CL = 5 DDR2-800 3.0ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 1

Marking
-80E -667 -53E

Note Not recommended for new designs.

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2007 Micron Technology, Inc. All rights reserved.

Products and specifications discussed herein are subject to change by Micron without notice.
2GB, 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-667

PC2-5300
-53E

PC2-4200

Table 2 Addressing

Parameter Refresh count Device bank address Device configuration Row address Column address Module rank address

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT36HTF51272FY-80EE1D4 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT36HTF51272FY-80EE1D4 648369