IPS03N03LB G
IPS03N03LB G Datasheet
IPS03N03LB G
| Part | Datasheet |
|---|---|
IPS03N03LB G |
IPS03N03LB G (pdf) |
| Related Parts | Information |
|---|---|
IPD03N03LB G |
IPD03N03LB G |
| PDF Datasheet Preview |
|---|
| Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD03N03LB G IPS03N03LB G Product Summary V DS R DS on ,max ID Type IPD03N03LB G IPS03N03LB G Package Marking PG-TO252-3-11 03N03LB PG-TO251-3-11 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=90 A, R GS=25 dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 90 360 240 ±20 115 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-11 IPD03N03LB G IPS03N03LB G Parameter Symbol Conditions min. Values typ. |
| More datasheets: JW150C1 | JW050C1 | SLS200PS2X0-01 | 278-25-336SA2I | 278-25-336SA2I8 | BUZ32 H | DAMM15SF | DDMN24H7PYK87 | FH34SW-12S-0.5SH(50) | DAMP3W3PJK87 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPS03N03LBG Datasheet file may be downloaded here without warranties.