IPD03N03LB G

IPD03N03LB G Datasheet

IPD03N03LB G

Part	Datasheet
IPD03N03LB G	IPD03N03LB G (pdf)

Related Parts	Information
IPS03N03LB G	IPS03N03LB G

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Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel, logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPD03N03LB G IPS03N03LB G Product Summary V DS R DS on ,max ID Type IPD03N03LB G IPS03N03LB G Package Marking PG-TO252-3-11 03N03LB PG-TO251-3-11 03N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=90 A, R GS=25 dv /dt I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 90 360 240 ±20 115 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-11 IPD03N03LB G IPS03N03LB G Parameter Symbol Conditions min. Values typ.

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Type

Power-Transistor

Package Marking
• Qualified according to JEDEC1 for target applications
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPD03N03LB G

IPS03N03LB G

Product Summary V DS R DS on ,max ID

Type

IPD03N03LB G

IPS03N03LB G

Package Marking

PG-TO252-3-11 03N03LB

PG-TO251-3-11 03N03LB

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=90 A, R GS=25
dv /dt

I D=90 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 90 360 240
±20 115 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-11

IPD03N03LB G

IPS03N03LB G

Parameter

Symbol Conditions
min.

Values typ.

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Datasheet ID: IPD03N03LBG 638139