BUZ32 H
BUZ32 H Datasheet
BUZ 32 H
| Part | Datasheet |
|---|---|
BUZ32 H |
BUZ32 H (pdf) |
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| SIPMOS Power Transistor BUZ 32 H • N channel • Enhancement mode • Avalanche-rated Halogen-free according to IEC61249-2-21 Pin 1 G Pin 2 D Pin 3 S Type BUZ 32 H VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 29 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = 2 mH, Tj = 25 Gate source voltage Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package PG-TO-220-3 Pb-free Yes Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 -55 + 150 -55 + 150 55 / 150 / 56 2009-11-10 BUZ 32 H Electrical Characteristics, at Tj = unless otherwise specified Parameter |
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