IPD25CNE8N G

IPD25CNE8N G Datasheet

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Part	Datasheet
IPD25CNE8N G	IPD25CNE8N G (pdf)

Related Parts	Information
IPP26CNE8N G	IPP26CNE8N G

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OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Product Summary V DS R DS on ,max TO252 ID 85 V 25 35 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 * Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 PG-TO251-3 Marking 26CNE8N 25CNE8N 26CNE8N 26CNE8N 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C E AS dv /dt V GS I D=35 A, R GS=25 I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1

PDF Datasheet Preview

OptiMOS 2 Power-Transistor

Features
• N-channel, normal level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Product Summary V DS R DS on ,max TO252 ID
85 V 25 35 A
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant
• Qualified according to JEDEC1 for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *

Type

IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G

Package

PG-TO263-3

PG-TO252-3

PG-TO262-3

PG-TO220-3

PG-TO251-3

Marking
26CNE8N
25CNE8N
26CNE8N
26CNE8N
25CNE8N

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Value

Unit

Continuous drain current

T C=25 °C

T C=100 °C

Pulsed drain current2

I D,pulse T C=25 °C

E AS dv /dt V GS

I D=35 A, R GS=25

I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

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Datasheet ID: IPD25CNE8NG 638102