IPP26CNE8N G
IPP26CNE8N G Datasheet
IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G
| Part | Datasheet |
|---|---|
IPP26CNE8N G |
IPP26CNE8N G (pdf) |
| Related Parts | Information |
|---|---|
IPD25CNE8N G |
IPD25CNE8N G |
| PDF Datasheet Preview |
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| OptiMOS 2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Product Summary V DS R DS on ,max TO252 ID 85 V 25 35 A • 175 °C operating temperature • Pb-free lead plating RoHS compliant • Qualified according to JEDEC1 for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 * Type IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G Package PG-TO263-3 PG-TO252-3 PG-TO262-3 PG-TO220-3 PG-TO251-3 Marking 26CNE8N 25CNE8N 26CNE8N 26CNE8N 25CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current T C=25 °C T C=100 °C Pulsed drain current2 I D,pulse T C=25 °C E AS dv /dt V GS I D=35 A, R GS=25 I D=35 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 |
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