IKD06N60R
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IKD06N60R (pdf) |
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IGBT IKD06N60R IKD06N60R Features: Applications: Type IKD06N60R 600V 6A 1.65V Tvjmax 175°C Marking K06R60 Package PG-TO252-3 IKD06N60R IKD06N60R Parameter Turn off safe operating area Gate-emitter voltage Short circuit withstand time Allowed number of short circuits < 1000 Time between short circuits 1.0s Operating junction temperature Storage temperature Soldering temperature, reflow soldering MSL1 according to JEDEC J-STA-020 Symbol VCE IC ICpuls - IF IFpuls VGE Ptot Tvj Tstg Value Unit ±20 Parameter Characteristic IGBT thermal resistance,1 junction - case Diode thermal resistance,2 junction - case Thermal resistance, min. footprint junction - ambient Thermal resistance, Cu on PCB junction - ambient Symbol Conditions Rth j-c Rth j-c Rth j-a Rth j-a Unit 1 Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. 2 Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. IKD06N60R Parameter Symbol Conditions Collector-emitter breakdown voltage V BR CES Collector-emitter saturation voltage VCEsat Diode forward voltage Gate-emitter threshold voltage |
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