• Built in bias resistor R1 = 10 , R2 = 10<br>• BCR183S / U Two internally isolated
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BCR 183L3 E6327 (pdf) |
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BCR 183T E6327 |
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PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 , R2 = 10 • BCR183S / U Two internally isolated transistors with good matching in one multichip package BCR183... BCR183/F/L3 BCR183T/W R1 R2 2 E EHA07183 Type BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W BCR183S/U EHA07173 Marking Pin Configuration Package WMs 1=B 2=E 3=C - SOT23 WMs 1=B 2=E 3=C - TSFP-3 WM 1=B 2=E 3=C - TSLP-3-4 WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 WMs 1=B 2=E 3=C - SC75 WMs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 WMs 1=B 2=E 3=C - SOT323 Mar-03-2005 BCR183... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR183, TS 102°C BCR183F, TS 128°C BCR183L3, TS 135°C BCR183S, TS 115°C BCR183T, TS 109C BCR183U, TS 118°C BCR183W, TS 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1 BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W Symbol VCEO VCBO VEBO Vi on IC Ptot Tj Tstg Symbol RthJS Value 50 10 20 100 200 250 150 -65 150 Value 240 90 60 140 165 133 105 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA mW |
More datasheets: 76650-0091 | KA76L05ZTA | KA76L05ZTF | LTW-5630AZG50 | LTW-5630AZG30 | LTW-5630AZG35 | LTW-5630AZG27 | LTW-5630AZG65 | LTW-5630AZG40 | LTW-5630AZG57 |
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