IXTH11P50
IXTH11P50 Datasheet
IXTH 11P50 IXTT 11P50
| Part | Datasheet |
|---|---|
IXTH11P50 |
IXTH11P50 (pdf) |
| Related Parts | Information |
|---|---|
IXTT11P50 |
IXTT11P50 |
| PDF Datasheet Preview |
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| Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 11P50 IXTT 11P50 VDSS = ID25 = = RDS on -500 V -11 A Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight VDSS VGS th IGSS IDSS RDS on Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C RGS = 1 Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -500 -500 ±20 ±30 -55 +150 -55 +150 TO-247 AD IXTH D TO-268 IXTT Case Style G = Gate S = Source D = Drain TAB = Drain Maximum lead temperature for soldering mm in. from case for 10 s Mounting torque TO-247 TO-247 AD TO-268 Nm/lb.in. Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. BVVGSDS=S T0eVm,pIDer=at-u2r5e0CµoAefficient VDS = VGS, ID = -250 µA VGS th Temperature Coefficient VGS = ±20 VDC, VDS = 0 VDS = • VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = -10 V, ID = • ID25 RDS on Temperature Coefficient -500 ±100 |
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