IDB10S60C
IDB10S60C Datasheet
IDB10S60C
| Part | Datasheet |
|---|---|
IDB10S60C |
IDB10S60C (pdf) |
| PDF Datasheet Preview |
|---|
| 2nd Generation thinQ!TM SiC Schottky Diode Product Summary VDC Qc IF IDB10S60C 600 V 24 nC 10 A D2PAK PG-TO263-3-2 thinQ! 2G Diode designed for fast switching applications like • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK PG-TO263-3-2 Marking D10S60C Pin 2 C Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous forward current RMS forward current IF I F,RMS Surge non-repetitive forward current, sine halfwave I F,SM T C<135 °C f =50 Hz T C=25 °C, t p=10 ms Repetitive peak forward current I F,RM T j=150 °C, T C=100 °C, D Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs value T C=25 °C, t p=10 ms V RRM Diode ruggedness dv/dt dv/ dt Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Pin 3 A Value 10 15 76 32 350 29 600 50 83 -55 175 Unit A A2s V/ns W °C 2014-10-15 IDB10S60C Parameter Symbol Conditions |
| More datasheets: ICS601M-01IT | ICS601G-01 | ICS601M-01 | ICS601M-01I | ICS601G-01I | ICS601G-01IT | ICS601G-01T | ICS601M-01T | APTGF180A60TG | MAGX-000025-150000 |
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