APTGF180A60TG

APTGF180A60TG Datasheet


APTGF180A60TG

Part Datasheet
APTGF180A60TG APTGF180A60TG APTGF180A60TG (pdf)
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APTGF180A60TG

Phase leg NPT IGBT Power Module

VCES = 600V IC = 180A Tc = 80°C

VBUS

NT C2

Q1 G1

Q2 G2
0/VBU S

NT C1

Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C

Tj = 150°C 400A 600V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF180A60TG

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current VCE sat Collector Emitter saturation Voltage

VGE = 0V VCE = 600V VGE =15V IC = 180A

Tj = 25°C Tj = 125°C Tj = 25°C

Tj = 125°C
300 1000

VGE th Gate Threshold Voltage

VGE = VCE, IC = 2mA

IGES Gate Emitter Leakage Current
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Datasheet ID: APTGF180A60TG 648748