MAGX-000025-150000
MAGX-000025-150000 Datasheet
MAGX-000025-150000
| Part | Datasheet |
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MAGX-000025-150000 |
MAGX-000025-150000 (pdf) |
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| MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz • GaN on SiC Transistor Technology • Broadband Unmatched Transistor • Common-Source Configuration • +50 V Typical Operation • Class AB Operation • RoHS* Compliant and 260°C Reflow Compatible • MTTF = 600 years TJ < 200 °C • General purpose for pulsed or CW applications The MAGX-000025-150000 is a gold-metalized Gallium Nitride GaN on Silicon Carbide SiC RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies. Functional Schematic MAGX-000025-150000 Ordering Information Part Number MAGX-000025-150000 MAGX-000025-SB2PPR MAGX-000025-SB1PPR Flanged 1200-1400 MHz Evaluation Board 2500 MHz Evaluation Board Pin No. Function 1 Vgg/RF Input 2 Vdd/RF Output 3 Vgg/RF Input 4 Vdd/RF Output * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Electrical Specifications1 Freq. = 1200-1400 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty Output Power PIN= W POUT Power Gain PIN= W Drain Efficiency PIN= W Droop PIN= W Droop Load Mismatch Stability PIN= W VSWR-S - Load Mismatch Tolerance PIN= W VSWR-T - 10:1 Typical RF Characteristics2 Freq. = 2500 MHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests VDD = 50 V, IDQ = 600 mA, 300 µs Pulse, 20% Duty Output Power PIN= 7 W |
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