BUZ80A

BUZ80A Datasheet

BUZ 80 A

Part	Datasheet
BUZ80A	BUZ80A (pdf)

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BUZ 80 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 80 A VDS 800 V RDS on Maximum Ratings Parameter Continuous drain current TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Package TO-220 AB Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Ordering Code C67078-S1309-A3 Values Unit ± 20 -55 + 150 °C -55 + 150 55 / 150 / 56 09/96 BUZ 80 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter min. Values Unit typ. max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 2 A V BR DSS VGS th IDSS IGSS RDS on 4 µA 1 100 nA 100 Semiconductor Group 09/96 BUZ 80 A Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter min. Dynamic Characteristics Transconductance 2 * ID * RDS on max, ID = 2 A RGS = 50 Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 gfs 1

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BUZ 80 A

SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated

Pin 1 G

Pin 2 D

Pin 3 S

Type BUZ 80 A

VDS 800 V

RDS on

Maximum Ratings Parameter Continuous drain current TC = 26 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse

ID = A, VDD = 50 V, RGS = 25

L = mH, Tj = 25 °C Gate source voltage Power dissipation TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Semiconductor Group

Package TO-220 AB

Symbol ID

IDpuls

IAR EAR EAS

VGS Ptot

Tj Tstg RthJC RthJA
Ordering Code C67078-S1309-A3

Values

Unit
± 20
-55 + 150 °C
-55 + 150
55 / 150 / 56
09/96

BUZ 80 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter
min.

Values

Unit
typ.
max.

Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = mA, Tj = 25 °C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 2 A

V BR DSS

VGS th

IDSS

IGSS

RDS on
4 µA
1 100
nA 100

Semiconductor Group
09/96

BUZ 80 A

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter
min.

Dynamic Characteristics Transconductance
2 * ID * RDS on max, ID = 2 A

RGS = 50

Rise time VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50

Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50

Fall time VDD = 30 V, VGS = 10 V, ID = 3 A

RGS = 50
gfs 1

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Datasheet ID: BUZ80A 637972