MT18HVF25672PDZ 2GB
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MT18HVF25672PDZ-80EH1 (pdf) |
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MT18HVF25672PDZ-667H1 |
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2GB x72, ECC, DR 240-Pin DDR2 SDRAM VLP RDIMM Features DDR2 SDRAM VLP RDIMM MT18HVF25672PDZ 2GB • 240-pin, registered very low profile, dual in-line memory module, ATCA form factor • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 2GB 256 Meg x 72 • Supports ECC error detection and correction • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Dual rank • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence-detect SPD with EEPROM • Gold edge contacts • Halogen-free Figure 1 240-Pin RDIMM ATCA Form Factor Module height 17.9mm 0.705in Options • Parity • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM halogen-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking -80E -800 -667 Contact Micron for industrial temperature module offerings. CL = CAS READ latency registered mode will add one clock cycle to CL. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 2GB x72, ECC, DR 240-Pin DDR2 SDRAM VLP RDIMM Features |
More datasheets: SM16LC15E3/TR13 | SM16LC12E3/TR13 | SM16LC03E3/TR13 | SM16LC08/TR13 | SM16LC24E3/TR13 | SM16LC03 | SM16LC03/TR13 | SM16LC15/TR13 | SM16LC05E3/TR13 | MT18HVF25672PDZ-667H1 |
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