PZTA92E6433HTMA1

PZTA92E6433HTMA1 Datasheet

High breakdown voltage Low collector-emitter saturation voltage Complementary type PZTA42 NPN

Part	Datasheet
PZTA92E6433HTMA1	PZTA92E6433HTMA1 (pdf)

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PNP Silicon High Voltage Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type PZTA42 NPN PZTA92 VPS05163 Type PZTA92 Marking PZTA 92 1=B Pin Configuration 2=C 3=E 4=C Package SOT223 Maximum Ratings Parameter Value Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature VCEO VCBO VEBO IC IB Ptot Tj Tstg 300 5 500 100 150 -65 150 Thermal Resistance Junction - soldering point 1 RthJS 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA W °C Dec-12-2001 PZTA92 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1 IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V V BR CEO 300 V BR CBO 300 V BR EBO 5 ICBO 250 nA ICBO 20 µA IEBO 100 nA Collector-emitter saturation voltage1 IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1 IC = 20 mA, IB = 2 mA VCEsat VBEsat AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz

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PNP Silicon High Voltage Transistor

High breakdown voltage Low collector-emitter saturation voltage Complementary type PZTA42 NPN

PZTA92

VPS05163

Type PZTA92

Marking PZTA 92 1=B

Pin Configuration 2=C 3=E 4=C

Package SOT223

Maximum Ratings Parameter

Value

Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature

VCEO VCBO VEBO IC IB Ptot Tj Tstg
300 5 500 100 150 -65 150

Thermal Resistance Junction - soldering point 1

RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance

Unit V
mA W °C

Dec-12-2001

PZTA92

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Values

Unit
min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1 IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V

V BR CEO 300

V BR CBO 300

V BR EBO 5

ICBO
250 nA

ICBO
20 µA

IEBO
100 nA

Collector-emitter saturation voltage1 IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1 IC = 20 mA, IB = 2 mA

VCEsat

VBEsat

AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz

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Datasheet ID: PZTA92E6433HTMA1 638526