MRF559G
MRF559G Datasheet
MRF559 MRF559G
| Part | Datasheet |
|---|---|
MRF559G |
MRF559G (pdf) |
| PDF Datasheet Preview |
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| RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish • Specified V, 870 MHz Characteristics • Output Power = W • Minimum Gain = dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION Designed primarily for wideband large signal stages in the UHF frequency range. ABSOLUTE MAXIMUM RATINGS Tcase = 25°C Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current Thermal Data Tstg Total Device Dissipation TC = 75ºC Derate above 75ºC Storage Temperature Range Value Unit -65 to +150 Watts mW/ ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at or contact our factory direct. ELECTRICAL SPECIFICATIONS Tcase = 25°C STATIC off Test Conditions BVCEO BVCBO BVEBO ICES Collector-Emitter Breakdown Voltage IC = mAdc, IB = 0 Collector-Base Breakdown Voltage IC = mAdc, IB = 0 Emitter-Base Breakdown Voltage IE = mAdc, IC = 0 Collector Cutoff Current VCE = 15 Vdc, VBE = 0 Vdc DC Current Gain IC = 50 mAdc, VCE = 10 Vdc DYNAMIC Test Conditions Output Capacitance VCB = Vdc, IE = 0, f = MHz MRF559 MRF559G Value Min. |
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