BUZ31L H
BUZ31L H Datasheet
BUZ 31L H
| Part | Datasheet |
|---|---|
BUZ31L H |
BUZ31L H (pdf) |
| PDF Datasheet Preview |
|---|
| SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level BUZ 31L H Halogen-free according to IEC61249-2-21 Type BUZ 31 L H VDS 200 V RDS on Maximum Ratings Parameter Continuous drain current TC = 28 Pulsed drain current TC = 25 Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = A, VDD = 50 V, RGS = 25 L = mH, Tj = 25 Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Pin 1 G Pin 2 D Package PG-TO220-3 Pb-free Yes Pin 3 S Symbol ID IDpuls IAR EAR EAS Ptot Tj Tstg RthJC RthJA Values Unit ± 20 Class 1 -55 + 150 -55 + 150 55 / 150 / 56 2009-11-10 BUZ 31L H Electrical Characteristics, at Tj = unless otherwise specified Parameter min. |
| More datasheets: IDT2305-1DCI | IDT2305-1DCI8 | IDT2305-1HDC | IDT2305-1HDCI | IDT2305-1HDC8 | PS-10B2-1 | WXR1850TN | ICS953401CFLFT | BSC106N025S G | AT24C64B-10PU-2.7 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BUZ31LH Datasheet file may be downloaded here without warranties.