BSC106N025S G

BSC106N025S G Datasheet

BSC106N025S G

Part	Datasheet
BSC106N025S G	BSC106N025S G (pdf)

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OptiMOS 2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • Logic level / N-channel • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • Avalanche rated dv/dt rated • Pb-free lead plating RoHS compliant • Halogen-free according to IEC61249-2-21 BSC106N025S G Product Summary V DS R DS on ,max ID 25 V 30 A PG-TDSON-8 Type BSC106N025S G Package PG-TDSON-8 Marking 106N025S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W2 Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C3 I D=30 A, R GS=25 dv /dt I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation P tot T C=25 °C T A=25 °C, R thJA=45 K/W2 Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 30 13 120 80 ±20 43 -55 150 55/150/56 Unit A mJ kV/µs V W °C 2009-11-03 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA bottom top minimal footprint 6 cm2 cooling area2 BSC106N025S G

PDF Datasheet Preview

OptiMOS 2 Power-Transistor

Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• Logic level / N-channel
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• Avalanche rated dv/dt rated
• Pb-free lead plating RoHS compliant
• Halogen-free according to IEC61249-2-21

BSC106N025S G

Product Summary

V DS R DS on ,max ID
25 V 30 A PG-TDSON-8

Type BSC106N025S G

Package PG-TDSON-8

Marking 106N025S

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C

T C=100 °C

T A=25 °C, R thJA=45 K/W2

Pulsed drain current Avalanche energy, single pulse

I D,pulse E AS

T C=25 °C3 I D=30 A, R GS=25
dv /dt

I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C

Gate source voltage

Power dissipation

P tot

T C=25 °C

T A=25 °C, R thJA=45 K/W2

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 30 13 120 80
±20 43 -55 150 55/150/56

Unit A
mJ kV/µs V W
°C 2009-11-03

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case R thJC

Thermal resistance, junction - ambient

R thJA
bottom top minimal footprint 6 cm2 cooling area2

BSC106N025S G

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Datasheet ID: BSC106N025SG 637760