BSL315PL6327HTSA1

BSL315PL6327HTSA1 Datasheet

BSL315P

Part	Datasheet
BSL315PL6327HTSA1	BSL315PL6327HTSA1 (pdf)

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OptiMOS -P 2 Small-Signal-Transistor Features • Dual P-channel • Enhancement mode • Logic level 4.5V rated • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free RoHS compliant • Halogen free according to IEC61249-2-21 BSL315P Product Summary VDS RDS on ,max VGS=10 V VGS=4.5 V -30 V 150 mW 270 A PG-TSOP-6 Type BSL315P Package Tape and Reel Information PG-TSOP-6 H6327 3000 pcs/ reel Marking sPF Maximum ratings, at T j=25 °C, unless otherwise specified 1 Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Avalanche energy, single pulse I D=-1.5 A, R GS=25 W dv /dt I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Gate source voltage Power dissipation1 P tot T A=25 °C Operating and storage temperature T j, T stg ESD Class JESD22-A114 -HBM Soldering Temperature IEC climatic category DIN IEC 68-1 Remark one of both transistors in operation Lead Free Packing Non dry Value Unit ±20 -55 150 0 <250V 260 °C 55/150/56 kV/µs V W °C V °C °C 2013-11-07 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions

PDF Datasheet Preview

OptiMOS -P 2 Small-Signal-Transistor

Features
• Dual P-channel
• Enhancement mode
• Logic level 4.5V rated
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free RoHS compliant
• Halogen free according to IEC61249-2-21

BSL315P

Product Summary

VDS RDS on ,max

VGS=10 V VGS=4.5 V
-30 V 150 mW 270 A

PG-TSOP-6

Type BSL315P

Package Tape and Reel Information PG-TSOP-6 H6327 3000 pcs/ reel

Marking sPF

Maximum ratings, at T j=25 °C, unless otherwise specified 1

Parameter

Symbol Conditions

Continuous drain current Pulsed drain current

ID I D,pulse

T A=25 °C T A=70 °C T A=25 °C

Avalanche energy, single pulse

I D=-1.5 A, R GS=25 W
dv /dt

I D=-1.5 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C

Gate source voltage

Power dissipation1

P tot

T A=25 °C

Operating and storage temperature T j, T stg

ESD Class

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category DIN IEC 68-1 Remark one of both transistors in operation

Lead Free Packing

Non dry

Value

Unit
±20 -55 150 0 <250V 260 °C 55/150/56
kV/µs

V W °C V °C °C
2013-11-07

Parameter

Thermal characteristics Thermal resistance, junction - ambient

Symbol Conditions

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Datasheet ID: BSL315PL6327HTSA1 637782