MT8HTF12864HY-800E1

MT8HTF12864HY-800E1 Datasheet

MT8HTF3264H I 256MB MT8HTF6464H I 512MB MT8HTF12864H I 1GB

Part	Datasheet
MT8HTF12864HY-800E1	MT8HTF12864HY-800E1 (pdf)

Related Parts	Information
MT8HTF6464HY-53EB3	MT8HTF6464HY-53EB3
MT8HTF6464HY-40EB3	MT8HTF6464HY-40EB3

PDF Datasheet Preview
256MB, 512MB, 1GB x64, SR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT8HTF3264H I 256MB MT8HTF6464H I 512MB MT8HTF12864H I 1GB For component data sheets, refer to Micron’s Web site: • 200-pin, small outline, dual in-line memory module SODIMM • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , 1GB 128 Meg x 64 • VDD = VDDQ = +1.8V • VDDSPD = +1.7V to +3.6V • JEDEC standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • Four-bit prefetch architecture • DLL to align DQ and DQS transitions with CK • Multiple internal device banks for concurrent operation • Programmable CAS# latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths 4 or 8 • Adjustable data-output drive strength • 64ms, 8,192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 200-pin SODIMM MO-224 R/C “B” Height 30mm 1.18in Options • Operating temperature • Commercial 0°C TC +85°C • Industrial TC +95°C 1,2 • Package 200-pin SODIMM Pb-free • Frequency/CAS latency3 2.5ns CL = 5 DDR2-800 4 2.5ns CL = 6 DDR2-800 4 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 • PCB Height 30mm 1.18in Marking -80E -800 -667 -53E -40E Notes Industrial temperatures apply to DRAM only. Contact Micron for product availability. CL = CAS READ latency Not available in 256MB density Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E

PDF Datasheet Preview

256MB, 512MB, 1GB x64, SR 200-Pin DDR2 SDRAM SODIMM Features

DDR2 SDRAM SODIMM

MT8HTF3264H I 256MB MT8HTF6464H I 512MB MT8HTF12864H I 1GB

For component data sheets, refer to Micron’s Web site:
• 200-pin, small outline, dual in-line memory module SODIMM
• Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400
• 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , 1GB 128 Meg x 64
• VDD = VDDQ = +1.8V
• VDDSPD = +1.7V to +3.6V
• JEDEC standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
operation
• Programmable CAS# latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Single rank

Figure 1 200-pin SODIMM MO-224 R/C “B”

Height 30mm 1.18in

Options
• Operating temperature
• Commercial 0°C TC +85°C
• Industrial TC +95°C 1,2
• Package
200-pin SODIMM Pb-free
• Frequency/CAS latency3
2.5ns CL = 5 DDR2-800 4 2.5ns CL = 6 DDR2-800 4
3ns CL = 5 DDR2-667
3.75ns CL = 4 DDR2-533
5.0ns CL = 3 DDR2-400
• PCB Height
30mm 1.18in

Marking
-80E -800 -667 -53E -40E

Notes Industrial temperatures apply to DRAM only. Contact Micron for product availability. CL = CAS READ latency Not available in 256MB density

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade Nomenclature CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

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Datasheet ID: MT8HTF12864HY-800E1 648482