BFS 360L6 E6327
BFS 360L6 E6327 Datasheet
BFS360L6
| Part | Datasheet |
|---|---|
BFS 360L6 E6327 |
BFS 360L6 E6327 (pdf) |
| PDF Datasheet Preview |
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| NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation For low noise amplifiers For Oscillators up to GHz and Pout > 10 dBm Low noise figure dB at GHz Built in 2 transitors TR1, TR2 die as BFR360L3 BFS360L6 6 TR1 P-TSLP-6-1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS360L6 Marking Pin Configuration Package 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1 TS 101°C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point2 RthJS 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance Value 6 15 2 35 4 150 -65 150 -65 150 Value Unit V mA mW °C Unit K/W Jun-11-2003 BFS360L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, VCE = 3 V V BR CEO 6 ICES 10 µA ICBO |
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